N-CHANNEL MOSFET - UTC
Description
UNISONIC TECHNOLOGIES CO.
, LTD
24NM50
Preliminary
24A, 500V N-CHANNEL SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC 24NM50 is a Super Junction MOSFET Structure and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged avalanche characteristics.
This power MOSFET is usually used at AC-DC converters for power applications.
FEATURES
* RDS(ON) ≤ 0.
125 Ω @ VGS=10V, ID=12A * High Switching Speed * 100% Avalanche Tested
SYMBOL
2.
Drain
1 1 1
Power MOSFET
TO-220F1 TO-220F2 TO-247
1.
Gate
3.
Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
24NM50L-TF1-T
24NM50G-TF1-T
24NM50L-TF2-T
24NM50G-TF2-T
24NM50L-T47-T
24NM50G-T47-T
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220F1 TO-220F2
TO-247
Pin Assignment 123 GDS GDS GDS
Packing
Tube Tube Tube
24NM50G-TF1-T
(1)Packing Type (2)Package Type (3)Green Package
(1) T: Tube (2) TF1: TO-220F1, TF2: TO-220F2, T47: TO-247 (3) G: Halogen Free and Lead Free, L: Lead Free
MARKING
Lot Code
UTC 24NM50
1
L: Lead Free G: Halogen Free
Date Code
www.
unisonic.
com.
tw Copyright © 2020 Unisonic Technologies Co.
, Ltd
1 of 6
QW-R205-163.
d
24NM50
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Continuous Pulsed (Note 2)
Avalanche Current (Note 2)
Avalanche Energy
Single Pulsed (Note 3)
Peak Diode Recovery dv/dt (Note 4)
VDSS VGSS
ID IDM IAR EAS dv/dt
500 V ±30 V 24 A 96 A 10.
4 A 648 mJ 8.
7 V/ns
Power Dissipation
TO-220F1/TO-220F2 TO-247
PD
45 W 200 W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1.
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2.
Repetitive Rating: Pulse width l...
Similar Datasheet
