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2SC3583

UTC
Part Number 2SC3583
Manufacturer UTC
Description NPN EPITAXIAL SILICON TRANSISTOR
Published Apr 17, 2020
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2SC3583 NPN EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPI...
Datasheet PDF File 2SC3583 PDF File

2SC3583
2SC3583

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2SC3583 NPN EPITAXIAL SILICON TRANSISTOR MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR  DESCRIPTION The UTC 2SC3853 is an NPN epitaxial transistor; it uses UTC’s advanced technology to provide the customers with high current gain and high current capability, etc.
 FEATURES * High current gain * High current capability  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC3583L-x-AE3-R 2SC3583G-x-AE3-R SOT-23 2SC3583L-x-AL6-R 2SC3583G-x-AL6-R SOT-363 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123456 Packing B E C - - - Tape Reel E1 B1 C2 E2 B2 C1 Tape Reel  MARKING SOT-23-3/SOT-323 SOT-363 www.
unisonic.
com.
tw Copyright © 2018 Unisonic Technologies Co.
, Ltd 1 of 3 QW-R201-111.
C 2SC3583 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO 10 1.
5 V V Collector Current Power Dissipation SOT-23 SOT-363 IC PD 65 mA 200 mW 125 mW Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 ELECTRICAL CHARACTERISTICS (TA =25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Collector Cut-Off Current ICBO VCB=10V, IE=0 1.
0 µA Emitter Cutoff Current DC Current Gain IEBO hFE (Note 1) VEB=1V, IE=0 VCE=8V, IC=20mA 1.
0 µA 50 100 250 Transition Frequency Feed-Back Capacitance fT Cre (Note 2) VCE=8V, IC=20mA VCB=10V, IE=0, f=1.
0MHz 9 GHz 0.
35 pF Notes: 1.
Pulsed measurement, pulse width ≤350μs, duty cycle ≤ 2% 2.
The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitan...


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