DatasheetsPDF.com

MJD31C

SeCoS
Part Number MJD31C
Manufacturer SeCoS
Description NPN Transistor
Published Apr 17, 2020
Detailed Description Elektronische Bauelemente MJD31C 3A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C”...
Datasheet PDF File MJD31C PDF File

MJD31C
MJD31C


Overview
Elektronische Bauelemente MJD31C 3A , 100V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Designed for general Excellent DC Current Gain Characteristics D-Pack (TO-252) PACKAGE INFORMATION Package MPQ TO-252 2.
5K Leader Size 13 inch A B GE C D Collector 2 1 Base 3 Emitter ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Ratings Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current -Continuous Collector Power Dissipation Junction and Storage Temperature Range VCBO VCEO VEBO IC PC TJ ,TSTG 100 100 5 3 1.
25 150 , -55~150 K HF MJ N O P Millimeter REF.
Min.
Max.
A 6.
35 6.
8 B 5.
20 5.
50 C 2.
15 2.
40 D 0.
45 0.
58 E 6.
8 7.
5 F 2.
40 3.
0 G 5.
40 6.
25 H 0.
64 1.
20 Millimeter REF.
Min.
Max.
J 2.
30 REF.
K 0.
64 0.
90 M 0.
50 1.
1 N 0.
9 1.
65 O0 0.
15 P 0.
43 0.
58 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Parameter Symbol Min.
Typ.
Max.
Collector-base breakdown voltage V(BR)CBO 100 - - Collector-emitter breakdown voltage VCEO(SUS) 100 - - Emitter-base breakdown voltage V(BR)EBO 5 - - Collector cut-off current ICES - - 20 Collector cut-off current ICEO - - 50 Emitter cut-off current IEBO - - 1 DC current gain 25 - - hFE 15 - 75 Collector-emitter saturation voltage VCE(sat) - - 1.
2 Base-emitter voltage VBE(ON) - - 1.
8 Transition frequency fT Note: 1.
Pulse Test: PW ≦300µS, Duty Cycle≦2%.
3-- http://www.
SeCoSGmbH.
com/ 30-Oct-2019 Rev.
B Unit V V V µA µA mA V V MHz Test Conditions IC=1mA, IE=0 IC=30mA, IB=0 IE=1mA, IC=0 VCE=100V, VEB=0 VCE=60V, IB=0 VEB=5V, IC=0 VCE=4V, IC=1A VCE=4V, IC=3A IC=3A, IB=375mA VCE=4V, IC=3A VCE=10V, IC=500mA, fT=1KHz Any changes of specification will not be informed individually.
Page 1 of 2 Elektronische Bauelemente TYPCIAL CHARACTERISTICS MJD31C 3A , 100V NPN Plastic Encapsulated Transistor http://www...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)