Ultrafast MOSFET - IXYS
Description
INTEGRATED CIRCUITS DIVISION
Features
• 2A Peak Source/Sink Drive Current • Wide Operating Voltage Range: 4.
5V to 35V • -40°C to +125°C Extended Operating Temperature
Range • Logic Input Withstands Negative Swing of up to 5V • Outputs May be Connected in Parallel for Higher
Drive Current • Matched Rise and Fall Times • Low Propagation Delay Time • Low 10A Supply Current • Low Output Impedance
Applications
• Efficient Power MOSFET and IGBT Switching • Switch Mode Power Supplies • Motor Controls • DC to DC Converters • Class-D Switching Amplifiers • Pulse Transformer Driver
IXD_602
2-Ampere Dual Low-Side Ultrafast MOSFET Drivers
Description
The IXDF602/IXDI602/IXDN602 dual high-speed gate drivers are especially well suited for driving the latest IXYS MOSFETs and IGBTs.
Each of the two outputs can source and sink 2A of peak current while producing voltage rise and fall times of less than 10ns.
The input of each driver is CMOS compatible, and is virtually immune to latch up.
Proprietary circuitry eliminates cross conduction and current “shoot-through.
” Low propagation delay and fast, matched rise and fall times make the IXD_602 family ideal for high-frequency and high-power applications.
The IXDN602 is configured as a dual non-inverting driver, the IXDI602 is configured as a dual inverting driver, and the IXDF602 has one inverting and one non-inverting driver.
The IXD_602 family is available in a standard 8-pin DIP (PI), an 8-pin SOIC (SIA), an 8-pin Power SOIC with an exposed metal back (SI), and an 8-pin DFN (D2) package.
Ordering Information
Part Number
IXDF602D2TR IXDF602PI IXDF602SI IXDF602SITR IXDF602SIA IXDF602SIATR IXDI602D2TR IXDI602PI IXDI602SI IXDI602SITR IXDI602SIA IXDI602SIATR IXDN602D2TR IXDN602PI IXDN602SI IXDN602SITR IXDN602SIA IXDN602SIATR
Logic Configuration
INA A
OUTA
INB B
OUTB
INA A
OUTA
INB B
OUTB
INA A
OUTA
INB B
OUTB
Package Type
8-Pin DFN 8-Pin DIP 8-Pin Power SOIC with Exposed Metal Back 8-Pin Power SOIC with Exposed Metal Bac...
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