P-channel MOSFET - NXP
Description
PMBFJ174; PMBFJ175;
PMBFJ176; PMBFJ177
P-channel silicon field-effect transistors
Rev.
3.
0 — 24 January 2020
Product data sheet
1 Product profile
1.
1 General description
Silicon symmetrical p-channel junction FETs in plastic microminiature SOT23 envelopes.
They are intended for application with analogue switches, choppers, commutators etc.
using SMD technology.
A special feature is the interchangeability of the drain and source connections.
1.
2 Quick reference data
Table 1.
Quick reference data
Symbol Parameter
Conditions
VDS VGSo -IG Ptot
drain-source voltage
gate-source voltage
gate current
total power dissipation
up to Tamb = 25 ° C
-IDSS drain current
-VDS = 15 V; VGS = 0 PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
RDS on drain-source ONresistance
-VDS = 0.
1 V; VGS = 0 PMBFJ174
PMBFJ175
PMBFJ176
PMBFJ177
Min Typ Max Unit
30 -
30 V
- - 30 V
- - 50 mA
- - 300 mW
20 721.
5 -
-----
135 mA 70 mA 35 mA 20 mA
85 Ω 125 Ω 250 Ω 300 Ω
NXP Semiconductors
2 Pinning information
Table 2.
Pinning Pin Description[1] 1 drain 2 source 3 gate
PMBFJ174; PMBFJ175; PMBFJ176; PMBFJ177
P-channel silicon field-effect transistors
Simplified outline Symbol
31 32 sym053
12
[1] Drain and source are interchangeable.
3 Ordering information
Table 3.
Ordering information Type number Package
Name Description
PMBFJ174
-
plastic surface mounted package; 3 leads
PMBFJ175
PMBFJ176
PMBFJ177
4 Marking
Table 4.
Marking Type number PMBFJ174 PMBFJ175 PMBFJ176 PMBFJ177
[1] * = manufacturing site
Marking code[1] *6X *6W *6S *6Y
Version SOT23
5 Limiting values
PMBFJ174_175_176_177
Product data sheet
Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS VGSO VGDO
drain-source voltage gate-source voltage gate-drain voltage
30 -
All information provided in this document is subject to legal disclaimers.
Rev.
3.
0 — 24 January 2020
Max Unit 30 V 30 V 30 V
© NXP B.
V.
2020.
All rights reserved...
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