DatasheetsPDF.com

2ED21814S06J

Part Number	2ED21814S06J
Manufacturer	Infineon
Description	650V high-side and low-side gate driver
Published	Apr 10, 2020
Detailed Description	2ED2181 (4) S06F (J) 2ED2181 (4) S06F (J) 650 V high-side and low-side gate driver with integrated bootstrap diode Fea...
Datasheet	2ED21814S06J PDF File

Overview

2ED2181 (4) S06F (J) 2ED2181 (4) S06F (J) 650 V high-side and low-side gate driver with integrated bootstrap diode Features  Unique Infineon Thin-Film-Silicon On Insulator (SOI)-technology  Negative VS transient immunity of 100 V  Floating channel designed for bootstrap operation  Operating voltages (VS node) upto + 650 V  Maximum bootstrap voltage (VB node) of + 675 V  Integrated ultra-fast, low resistance bootstrap diode  Logic operational up to –11 V on VS Pin  Negative voltage tolerance on inputs of –5 V  Independent under voltage lockout for both channels  Schmitt trigger inputs with hysteresis  3.
3 V, 5 V and 15 V input logic compatible  Maximum supply voltage of 25 V  D...

Similar Datasheet

2ED21814S06J 650V high-side and low-side gate driver - Infineon

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)