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CSD18511Q5A

Texas Instruments
Part Number CSD18511Q5A
Manufacturer Texas Instruments
Description power MOSFET
Published Apr 4, 2020
Detailed Description Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18511Q5A SLPS631 – DECEMBER...
Datasheet PDF File CSD18511Q5A PDF File

CSD18511Q5A
CSD18511Q5A

Overview
Product Folder Sample & Buy Technical Documents Tools & Software Support & Community CSD18511Q5A SLPS631 – DECEMBER 2016 CSD18511Q5A 40 V N-Channel NexFET™ Power MOSFET 1 Features •1 Low RDS(ON) • Low Thermal Resistance • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5-mm × 6-mm Plastic Package 2 Applications • DC-DC Conversion • Secondary Side Synchronous Rectifier • Battery Motor Control Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 63 11.
2 VGS = 4.
5 V VGS = 10 V 1.
8 2.
7 1.
9 UNIT V nC nC mΩ mΩ V Ordering Information(1) Device Qty Media Package CSD18511Q5A 2500 13-Inch Reel SON 5 mm × 6 mm CSD18511Q5AT 250 7-Inch Reel Plastic Package Ship Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
3 Description This 40 V, 1.
9 mΩ, SON 5 × 6 mm NexFET™ power MOSFET has been designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package limited) ID Continuous Drain Current (Silicon limited), TC = 25°C Continuous Drain Current (1) IDM Pulsed Drain Current (2) Power Dissipation(1) PD Power Dissipation, TC = 25°C TJ, Operating Junction and Tstg Storage Temperature Range EAS Avalanche Energy, Single Pulse ID = 56 A, L = 0.
1 mH, RG = 25 Ω VALUE 40 ±20 100 159 27 400 3.
1 104 –55 to 150 157 UNIT V V A A A W °C mJ (1) Typical RθJA = 40°C/W on a 1-inch2, 2-oz.
Cu pad on a 0.
06inch thick FR4 PCB.
(2) Max RθJC = 1.
2°C/W, Pulse duration ≤100μs, duty cycle ≤1% RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 10 9 TC = 25°C, I D = 24 A TC = 125°C, I D = 24 A 8 7 6 5 4 3 2 1 0 0 2 4 6 8 10 12...


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