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CSD18510KTT

Texas Instruments
Part Number CSD18510KTT
Manufacturer Texas Instruments
Description power MOSFET
Published Apr 4, 2020
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18510KTT SLPS638A – NOVEMBER 2...
Datasheet PDF File CSD18510KTT PDF File

CSD18510KTT
CSD18510KTT

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community CSD18510KTT SLPS638A – NOVEMBER 2016 – REVISED JANUARY 2017 CSD18510KTT 40-V N-Channel NexFET™ Power MOSFET 1 Features •1 Ultra-Low Qg and Qgd • Low-Thermal Resistance • Avalanche Rated • Lead-Free Terminal Plating • RoHS Compliant • Halogen Free • D2PAK Plastic Package 2 Applications • Secondary Side Synchronous Rectifier • Motor Control 3 Description This 40-V, 1.
4-mΩ, D2PAK (TO-263) NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
.
Drain (Pin 2) Gate (Pin 1) Source (Pin 3) .
Product Summary TA = 25°C VDS Drain-to-Source Voltage Qg Gate Charge Total (10 V) Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On Resistance VGS(th) Threshold Voltage TYPICAL VALUE 40 119 21 VGS = 4.
5 V VGS = 10 V 1.
7 2.
0 1.
4 UNIT V nC nC mΩ V DEVICE CSD18510KTT CSD18510KTTT Device Information(1) QTY MEDIA PACKAGE 500 13-Inch Reel 50 D2PAK Plastic Package SHIP Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet.
Absolute Maximum Ratings TA = 25°C VDS Drain-to-Source Voltage VGS Gate-to-Source Voltage Continuous Drain Current (Package Limited) VALUE 40 ±20 200 UNIT V V Continuous Drain Current (Silicon Limited), ID TC = 25°C Continuous Drain Current (Silicon Limited), TC = 100°C IDM Pulsed Drain Current(1) PD Power Dissipation TJ, Operating Junction, Tstg Storage Temperature EAS Avalanche Energy, Single Pulse ID = 81 A, L = 0.
1 mH, RG = 25 Ω 274 193 400 250 –55 to 175 328 A A W °C mJ (1) Max RθJC = 0.
6°C/W, pulse duration ≤ 100 μs, duty cycle ≤ 1%.
RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 8 TC = 25°C, I D = 100 A 7 TC = 125°C, I D = 100 A 6 5 4 3 2 1 0 0 2 4 6 8 10 12 14 16 18 20 VGS - Gate-to-Source Voltage (V) D007 Gate Charge 10 9 ID = 100 A, VDS = 20 V 8 7 6 5 4 3 2 1 0 0 20 40 60 80 Qg - Gate Charge (nC) 100 120 D004 1 A...


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