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CSD18512Q5B

Texas Instruments
Part Number CSD18512Q5B
Manufacturer Texas Instruments
Description power MOSFET
Published Apr 4, 2020
Detailed Description Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18512Q5B SLP...
Datasheet PDF File CSD18512Q5B PDF File

CSD18512Q5B
CSD18512Q5B

Overview
Product Folder Order Now Technical Documents Tools & Software Support & Community Reference Design CSD18512Q5B SLPS624A – DECEMBER 2016 – REVISED MARCH 2019 CSD18512Q5B 40 V N-channel NexFET™ power MOSFET 1 Features •1 Low RDS(ON) • Low thermal resistance • Avalanche rated • Logic level • Pb-free terminal plating • RoHS compliant • Halogen-free • SON 5 mm × 6 mm plastic package 2 Applications • DC-DC conversion • Secondary side synchronous rectifier • Motor control Product Summary TA = 25°C VDS Drain to source voltage Qg Gate charge total (10 V) Qgd Gate charge gate to drain RDS(on) Drain to source on resistance VGS(th) Threshold voltage TYPICAL VALUE 40 75 13.
3 VGS = 4.
5 V VGS = 10 V 1.
6 1.
8 1.
3 UNIT V nC nC mΩ mΩ V DEVICE CSD18512Q5B CSD18512Q5BT Ordering Information(1) QTY MEDIA PACKAGE SHIP 2500 13-Inch Reel SON 5 mm × 6 mm Tape and 250 7-Inch Reel Plastic Package Reel (1) For all available packages, see the orderable addendum at the end of the datasheet.
3 Description This 40 V, 1.
3 mΩ, 5 mm × 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications.
Top View S1 8D S2 7D S3 G4 D 6D 5D P0093-01 Absolute Maximum Ratings TA = 25°C VDS Drain to source voltage VGS Gate to source voltage Continuous drain current (package limited) VALUE 40 ±20 100 UNIT V V ID Continuous drain current (silicon limited), TC = 25°C Continuous drain current(1) IDM Pulsed drain current(2) Power dissipation(1) PD Power dissipation, TC = 25°C TJ, Operating Junction, Tstg Storage Temperature EAS Avalanche energy, single pulse ID = 64 A, L = 0.
1 mH, RG = 25 Ω 211 32 400 3.
1 139 –55 to 150 A A W °C 205 mJ (1) Typical RθJA = 40°C/W on a 1 inch2 , 2 oz.
Cu pad on a 0.
06 inch thick FR4 PCB.
(2) Max RθJC = 0.
9°C/W, pulse duration ≤100 μs, duty cycle ≤1% RDS(on) - On-State Resistance (m:) VGS - Gate-to-Source Voltage (V) RDS(on) vs VGS 8 TC = 25°C, I D = 30 A 7 TC = 125°C, I D = 30 A 6 5 4 3 2 1 0 0 2 4 6 8 10...


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