N-Channel Enhancement Mode Power MOSFET - CYStech
Description
CYStech Electronics Corp.
Spec.
No.
: C886K3 Issued Date : 2018.
06.
13 Revised Date : Page No.
: 1/10
100V N-Channel Enhancement Mode MOSFET
MTBC7N10K3
Features
• Lower gate charge.
• ESD protected gate.
• Pb-free lead plating and Halogen-free package.
BVDSS ID @TA=25°C, VGS=10V RDSON(TYP)@VGS=10V, ID=1A RDSON(TYP)@VGS=4.
5V, ID=1A RDSON(TYP)@VGS=4V, ID=1A
100V 1A 389mΩ 413mΩ 407mΩ
Equivalent Circuit
MTBC7N10K3
Outline
TO-92L
G：Gate S：Source D：Drain
SDG
Ordering Information
Device MTBC7N10K3-0-TB-G MTBC7N10K3-0-BM-G
Package
TO-92L (Pb-free lead plating and halogen-free package)
TO-92L (Pb-free lead plating and halogen-free package)
Shipping
2000 pcs / tape & box 500 pcs / bag, 10 bags/box,
10 boxes/carton
MTBC7N10K3
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products
Product name
CYStek Product Specification
CYStech Electronics Corp.
Spec.
No.
: C886K3 Issued Date : 2018.
06.
13 Revised Date : Page No.
: 2/10
Absolute Maximum Ratings (Tc=25C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
TA=25°C, VGS=10V Continuous Drain Current TA=70°C, VGS=10V
Pulsed Drain Current
Power Dissipation
TA=25°C TA=70°C
Operating Junction and Storage Temperature
Symbol VDS VGS ID IDM
PD Tj, Tstg
Limits
100 ±20
1 0.
8 4 (Note 1 & 2) 1 0.
64 -55 ~ +150
Unit V
A
W C
Thermal Data
Parameter Thermal Resistance, Junction-to-ambient, max
Note :1.
Pulse width limited by maximum junction temperature.
2.
Duty cycle ≤ 1%.
Symbol RθJA
Value 125
Unit C/W
Electrical Characteristics (TA=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Static BVDSS
△BVDSS/△Tj
100 -
107
- V VGS=0V, ID=250μA - mV/°C ID=1mA, referenced to 25°C
VGS(th) △VGS(th)/△Tj
1 -
- 2.
5 V VDS=10V, ID=1mA -3 - mV/°C ID=1mA, referenced to 25°C
IGSS - - ...
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