N-Channel Enhancement Mode Power MOSFET - CYStech
Description
CYStech Electronics Corp.
Spec.
No.
: C593L3 Issued Date : 2010.
07.
07 Revised Date : 2018.
02.
09 Page No.
: 1/8
N -Channel Logic Level Enhancement Mode MOSFET
MTBB5N10L3
BVDSS ID @ VGS=10V, TC=25°C
RDSON@VGS=10V, ID=5A
RDSON@VGS=5V, ID=5A
Features
RDSON@VGS=4.
5V, ID=5A
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating & Halogen-free package
100V 5A 129mΩ (typ.
) 134mΩ (typ.
) 136mΩ (typ.
)
Equivalent Circuit
MTBB5N10L3
G：Gate D：Drain S：Source
Outline
SOT-223
D
S D G
Ordering Information
Device MTBB5N10L3-0-T3-G
Package
SOT-223 (Pb-free lead plating & Halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBB5N10L3
Preliminary
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=5V Continuous Drain Current @ TC=100°C, VGS=5V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
1mH, ID=5A, RG=25Ω Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature
*2.
Duty cycle ≤ 1%
Symbol
VDS VGS
ID
IDM IAS EAS EAR
PD
Tj, Tstg
Spec.
No.
: C593L3 Issued Date : 2010.
07.
07 Revised Date : 2018.
02.
09 Page No.
: 2/8
Limits
100 ±20
5 3 20 5 1.
25 0.
625 7.
5 3 -55~+150
Unit
V
A
mJ W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Note : When mounted on a 1 in2 pad of 2 oz.
copper.
Symbol Rth,j-c Rth,j-a
Value 16.
7 100 (Note)
Unit °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static
BVDSS VG...
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