P-Channel Enhancement Mode Power MOSFET - CYStech
Description
CYStech Electronics Corp.
Spec.
No.
: C732L3 Issued Date : 2013.
01.
15 Revised Date : 2018.
11.
27 Page No.
: 1/9
P-Channel Enhancement Mode Power MOSFET
MTBB0P10L3
BVDSS ID @ TA=25°C, VGS=-10V
RDSON@VGS=-10V, ID=-2A RDSON@VGS=-4.
5V, ID=-1A
Features
Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package
-100V -2.
6A 187mΩ (typ) 185mΩ (typ)
Equivalent Circuit
MTBB0P10L3
Outline
SOT-223
D
G：Gate D：Drain S：Source
S D
G
Ordering Information
Device MTBB0P10L3-0-T3-G
Package
Shipping
SOT-223 (Pb-free lead plating & Halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBB0P10L3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=-10V, TA=25C Continuous Drain Current @ VGS=-10V, TA=70C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=6mH, ID=-2A, RG=25Ω
Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=70℃
Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature
*2.
Duty cycle ≤ 1%
Symbol
VDS VGS
ID
IDM IAS EAS EAR
PD
Tj, Tstg
Spec.
No.
: C732L3 Issued Date : 2013.
01.
15 Revised Date : 2018.
11.
27 Page No.
: 2/9
Limits
-100 ±20 -2.
6 -2.
1 -10.
4 -2 12 0.
5 2.
5 1.
6 -55~+150
Unit
V
A
mJ W C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max
Rth,j-c Rth,j-a
15 50 (Note)
C/W
Note : Surface mounted on a 1 in2 pad of 2 oz.
copper, t≤10s; 120°C/W when mounted on minimum copper pad.
Characteristics (Tc=25C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Con...
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