P-Channel Enhancement Mode Power MOSFET - CYStech
Description
CYStech Electronics Corp.
Spec.
No.
: C163J3 Issued Date : 2015.
05.
29 Revised Date : Page No.
: 1/9
P-Channel Enhancement Mode Power MOSFET
MTBB0P10AJ3 BVDSS ID@VGS=-10V, TC=25°C
RDSON@VGS=-10V, ID=-4.
7A
RDSON@VGS=-6V, ID=-1A
-100V -10A 280mΩ (typ.
) 298mΩ (typ.
)
Features
• Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package
Equivalent Circuit
MTBB0P10AJ3
Outline
TO-252(DPAK)
G：Gate D：Drain S：Source
G DS
Ordering Information
Device MTBB0P10AJ3-0-T3-G
Package
Shipping
TO-252 (Pb-free lead plating and halogen-free package)
2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel
Product rank, zero for no rank products
Product name
MTBB0P10AJ3
CYStek Product Specification
CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=0.
5mH, ID=-10A, RG=25Ω
Repetitive Avalanche Energy @ L=0.
05mH *2 Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃
Operating Junction and Storage Temperature Range Note : *1.
Pulse width limited by maximum junction temperature
*2.
Duty cycle ≤ 1%
Symbol
VDS VGS ID ID IDM IAS EAS EAR
Pd
Tj, Tstg
Spec.
No.
: C163J3 Issued Date : 2015.
05.
29 Revised Date : Page No.
: 2/9
Limits
-100 ±30 -10 -6.
3 -40 -10 25 5 50 20 -55~+150
Unit
V
A
mJ W °C
Thermal Data
Parameter Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max
Symbol Rth,j-c
Rth,j-a
Value 2.
5
110
Unit °C/W °C/W
Characteristics (Tc=25°C, unless otherwise specified)
Symbol
Min.
Typ.
Max.
Unit Test Conditions
Static BVDSS VGS(th)
IGSS
-100 -2 -
-4
V
VGS=0V, ID=-250μA VDS =VGS, ID=-250μA
-
-
±100
nA VGS=±30V, VDS=0V
IDSS
RDS(ON) *1 GFS *1
...
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