Hi-Rel PNP dual matched bipolar transistors - STMicroelectronics
Description
8 5
1 4
Flat-8
6 5 4
1 2 3
LCC-6
1 C1 2 B1 3 E1
C2 8 B2 7 E2 6
4
5
Flat-8
Pin 4 and pin 5 are connected together to the seal ring and lid
4 E1 6 B1
E2
3 B2 1
5 C1
AM03130REV1
LCC-6
C2 2
The upper metallic shield is not internally connected neither to any pin nor to the die inside
Product status link 2N3810HR
2N3810HR
Datasheet
Rad-Hard 60 V, 0.
05 A PNP dual matched transistor
Features
Vceo 60 V
IC(max.
) 0.
05 A
HFE at 10 V, 150 mA > 125
Tj(max.
) 200 °C
• Hermetic packages • ESCC qualified • 100 krad
Description
The 2N3810K and SOC3810HR are bipolar transistors able to operate under severe environment conditions and radiation exposure providing high immunity to total ionizing dose (TID).
Qualified as per ESCC 5207/005 specification and available in Flat-8 and LCC-6 hermetic packages, they are specifically recommended for space and harsh environment applications and suitable for low current and high precision circuits such preamplifiers, oscillators, current mirror configuration.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Product summary
Device
2N3810Kx 2N3810RKx SOC3810HRx SOC3810RHRx
Product summary
Qualification system
Agency specification
ESCC Flight
5207/005
ESCC Flight
5207/005
ESCC Flight
5207/005
ESCC Flight
5207/005
Note:
See Table 7 for ordering information.
Package
Flat-8 Flat-8 LCC-6 LCC-6
Radiation level -
100 krad -
100 krad
DS6098 - Rev 11 - April 2024 For further information contact your local STMicroelectronics sales office.
www.
st.
com
2N3810HR
Electrical ratings
1
Electrical ratings
Table 1.
Absolute maximum ratings
Symbol VCBO VCEO VEBO IC
Parameter Collector-base voltage (IE = 0) Collector-emitter voltage (IB = 0) Emitter-base voltage (IC = 0) Collector current
PTOT
Total dissipation at Tamb ≤ 25 °C
TSTG TJ
Storage temperature range Max.
operating junction temperature
1.
One section.
2.
Both sections.
for Flat-8 (1) for Fla...
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