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MUN5111

AiT Components

PNP SILICON SURFACE MOUNT TRANSISTOR - AiT Components


MUN5111
MUN5111

PDF File MUN5111 PDF File



Description
AiT Components Inc.
www.
ait-components.
com MUN5111~ MUN5137 BIAS RESISTOR TRANSISTOR PNP SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK DESCRIPTION FEATURES This new series of digital transistors is designed to  Simplifies Circuit Design replace a single device and its external resistor bias  Reduces Board Space network.
The BRT (Bias Resistor Transistor)  Reduces Component Count contains a single transistor with a monolithic bias  The modified gull–winged leads absorb thermal network consisting of two resistors; a series base stress during soldering eliminating the resistor and a base–emitter resistor.
The BRT possibility of damage to the die.
eliminates these individual components by  Available in SC-70 Package integrating them into a single device.
The use of a PIN DESCRIPTION BRT can reduce both system cost and board space.
The device is housed in the SC-70 package which is designed for low power surface mount applications.
The MUN5111~ MUN5137 is available in SC-70 Package ORDERING INFORMATION Package Type Part Number MUN5111 MUN5112 MUN5113 MUN5114 MUN5115 MUN5116 SC-70 MUN5130 MUN5131 MUN5132 MUN5133 MUN5134 MUN5135 MUN5136 MUN5137 Note 3,000pcs/Reel AiT provides all RoHS Compliant Products REV1.
0 - MAY 2016 RELEASED - -1- AiT Components Inc.
www.
ait-components.
com MUN5111~ MUN5137 BIAS RESISTOR TRANSISTOR PNP SILICON SURFACE MOUNT TRANSISTOR WITH MONOLITHIC BIAS RESISTOR NETWORK ABSOLUTE MAXIMUM RATINGS TA = 25°C, unless otherwise noted VCBO, Collector-Base Voltage 50Vdc VCEO, Collector-Emitter Voltage 50Vdc IC, Collector Current 100mAdc Stresses above may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
THERMAL CHARACTERI...



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