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FDC6333C

On Semiconductor
Part Number FDC6333C
Manufacturer On Semiconductor
Description N- & P-Channel Power MOSFET
Published Mar 22, 2020
Detailed Description MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using on...
Datasheet PDF File FDC6333C PDF File

FDC6333C
FDC6333C

Overview
MOSFET – N & P-Channel, POWERTRENCH) 30 V FDC6333C General Description These N & P−Channel MOSFETs are produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain superior switching performance.
These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO−8 and TSSOP−8 packages are impractical.
Features • Q1 2.
5 A, 30 V ♦ RDS(on) = 95 mW @ VGS = 10 V ♦ RDS(on) = 150 mW @ VGS = 4.
5 V • Q2 −2.
0 A, −30 V ♦ RDS(on) = 130 mW @ VGS = −10 V ♦ RDS(on) = 220 mW @ VGS = −4.
5 V • Low Gate Charge • High Performance Trench Technology for Extr...


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