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MTP1N100E

Part Number	MTP1N100E
Manufacturer	ON Semiconductor
Description	Power Field Effect Transistor
Published	Mar 22, 2020
Detailed Description	MTP1N100E Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor High−Performance Silicon−Gate CMOS This hig...
Datasheet	MTP1N100E PDF File

Overview

MTP1N100E Designer’s™ Data Sheet TMOS E−FET.
™ Power Field Effect Transistor High−Performance Silicon−Gate CMOS This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time.
In addition, this advanced TMOS E−FET is designed to withstand high energy in the avalanche and commutation modes.
The new energy efficient design also offers a drain−to−source diode with a fast recovery time.
Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating a...

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