P-Channel Logic Level Enhancement Mode Field Effect Transistor - ON Semiconductor
Description
NDP6020P / NDB6020P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
Features
These logic level P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
-24
A,
-20
V.
RDS(ON) RDS(ON) RDS(ON)
= = =
000.
.
.
0007755ΩΩΩ@@@VVGVGSGS==S=-2-4-.
27.
5.
5VV.
V.
.
Critical DC electrical parameters specified at elevated temperature.
Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor.
175°C maximum junction temperature rating.
High density cell design for extremely low RDS(ON).
TO-220 and TO-263 (D2PAK) package for both through hole and surface mount applications.
________________________________________________________________________________
S
G
D
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol Parameter
NDP6020P
VDSS Drain-Source Voltage VGSS Gate-Source Voltage - Continuous ID Drain Current - Continuous
- Pulsed
PD Total Power Dissipation @ TC = 25°C Derate above 25°C
TJ,TSTG Operating and Storage Temperature Range
-20 ±8 -24 -70 60 0.
4 -65 to 175
NDB6020P
Units V V A
W W/°C
°C
© 1997 Semiconductor Components Industries, LLC.
September-2017, Rev.
3
Publication Order Number: NDP6020P/D
Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol Parameter
Conditions
OFF CHARACTERISTICS
BVDSS IDSS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
VGS = 0 V, ID = -250 µA VDS = -16 V, VGS = 0 ...
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