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TB3100M

LITE-ON
Part Number TB3100M
Manufacturer LITE-ON
Description SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE
Published Mar 19, 2020
Detailed Description LITE-ON SEMICONDUCTOR TB0640M thru TB4000M SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Bi-Directional VDRM - 58 t...
Datasheet PDF File TB3100M PDF File

TB3100M
TB3100M

Overview
LITE-ON SEMICONDUCTOR TB0640M thru TB4000M SURFACE MOUNT THYRISTOR SURGE PROTECTIVE DEVICE Bi-Directional VDRM - 58 to 360 Volts IPP - 80 Amperes FEATURES Oxide Glass Passivated Junction Bidirectional protection in a single device Surge capabilities up to 80A @10/1000us or 250A @8/20us High off state Impedance and low on state voltage Plastic material has UL flammability classification 94V-0 MECHANICAL DATA Case : Molded plastic Polarity : Denotes none cathode band Weight : 0.
003 ounces, 0.
093 grams SMB SMB A DIM.
MIN.
MAX.
A 4.
06 4.
57 B 3.
30 3.
94 BC C 1.
96 2.
21 D 0.
15 0.
31 E 5.
21 5.
59 G F 0.
05 0.
20 H FD E G 2.
01 2.
62 H 0.
76 1.
52 All Dimensions in millimeter MAXIMUM RATINGS CHARACTERISTICS Non-repetitive peak impulse current @ 10/1000us Non-repetitive peak On-state current @ 8.
3ms (one half cycle) Junction temperature range storage temperature range THERMAL RESISTANCE SYMBOL IPP ITSM TJ TSTG CHARACTERISTICS Junction to leads Junction to ambient on print circuit (on re...


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