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STGWA60V60DWFAG

Part Number	STGWA60V60DWFAG
Manufacturer	STMicroelectronics
Published	Mar 17, 2020
Description	IGBT
Detailed Description	STGWA60V60DWFAG Datasheet Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring fr...
Datasheet	STGWA60V60DWFAG PDF File

Overview

STGWA60V60DWFAG Datasheet Automotive-grade trench gate field-stop 600 V, 60 A very high speed V series IGBT featuring freewheeling SiC diode Features G(1) C(2, TAB) E(3) Product status link STGWA60V60DWFAG • AEC-Q101 qualified • Maximum junction temperature: TJ = 175 °C • VCE(sat) = 1.
85 V (typ.
) @ IC = 60 A • Tail-less switching current • Tight parameter distribution • Low thermal resistance • Positive VCE(sat) temperature coefficient • Silicon carbide diode with no-reverse recovery charge is co-packaged in freewheeling configuration Applications • Automotive converters • Totem-pole power factor correction NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.
Co-packed with the IGBT a silicon carbide diode has been adopted: no recovery is shown at turn-off of the SiC diode and the already minimal capacitive turn-off behavior is independent of temperature.
Its high forward surge capability ensures good robustness during transient phases.
Product summary Order code STGWA60V60DWFAG Marking G60V60DWFAG Package TO-247 long leads Packing Tube DS13117 - Rev 2 - October 2019 For further information contact your local STMicroelectronics sales office.
www.
st.
com STGWA60V60DWFAG Electrical ratings 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VCES Collector-emitter voltage (VGE = 0 V) Continuous collector current at TC = 25 °C IC Continuous collector current at TC = 100 °C ICP (1) VGE Pulsed collector current (tp ּ≤ 1 μs, TJ < 175 C) Gate-emitter voltage IF Continuous forward current at TC = 100 °C IFRM (1) Repetitive peak forward current (TC = 100...

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