Silicon Carbide Power MOSFET - CREE
Description
VDS 1200 V
C3M0016120D
ID @ 25˚C
115 A
Silicon Carbide Power MOSFET TM
C3M MOSFET Technology
RDS(on) 16 mΩ
N-Channel Enhancement Mode
Features
Package
• 3rd generation SiC MOSFET technology
• High blocking voltage with low on-resistance
• High-speed switching with low capacitances
• •
Fast intrinsic diode with low reverse recovery (Qrr) Halogen free, RoHS compliant
Benefits • Reduce switching losses and minimize gate ringing • Higher system efficiency • Reduce cooling requirements • Increase power density • Increase system switching frequency
Applications
• Solar inverters • EV motor drive • High voltage DC/DC converters • Switched mode power supplies • Load switch
Part Number
Package
Marking
C3M0016120D
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
TO 247-3
C3M0016120D
Symbol
Parameter
Value Unit
Test Conditions
Note
VDSmax VGSmax VGSop
Drain - Source Voltage Gate - Source Voltage (dynamic) Gate - Source Voltage (static)
ID Continuous Drain Current
1200 -8/+19 -4/+15
115 85
V VGS = 0 V, ID = 100 μA
V AC (f >1 Hz)
V Static
VGS = 15 V, TC = 25˚C A
VGS = 15 V, TC = 100˚C
Note 1 Note 2
Fig.
19
ID(pulse) Pulsed Drain Current
250 A Pulse width tP limited by Tjmax
PD Power Dissipation TJ , Tstg Operating Junction and Storage Temperature
TL Solder Temperature Md Mounting Torque
Note (1): When using MOSFET Body Diode VGSmax = -4V/+19V Note (2): MOSFET can also safely operate at 0/+15 V
556
-40 to +175
260
1 8.
8
W TC=25˚C, TJ = 175 ˚C ˚C
˚C 1.
6mm (0.
063”) from case for 10s
Nm lbf-in
M3 or 6-32 screw
Fig.
20
1 C3M0016120D Rev.
-, 08-2019
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
Min.
Typ.
V(BR)DSS VGS(th)
Drain-Source Breakdown Voltage Gate Threshold Voltage
1200 1.
8
2.
5 2.
0
IDSS IGSS
RDS(on)
Zero Gate Voltage Drain Current Gate-Source Leakage Current
Drain-Source On-State Resistance
1 10 11.
2 16 28.
8
gfs Transconductance
53 47
C...
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