PNP Transistors - Kexin
Description
SMD Type
Transistors
PNP Transistors 2SA1257
Features
High breakdown voltage.
Small output capacitance.
● Very small-sized package permitting the 2SA1257/ 2SC3143-applied sets to be made small and slim.
+0.
12.
4 -0.
1
SOT-23
2.
9 +0.
1 -0.
1
0.
4 +0.
1 -0.
1
3
12
0.
95 +0.
1 -0.
1 1.
9 +0.
1 -0.
1
+0.
11.
3 -0.
1
0.
55 0.
4
Unit: mm 0.
1 +0.
05
-0.
01
+0.
10.
97 -0.
1
1.
Base 2.
Emitter 3.
collector
0-0.
1 +0.
10.
38
-0.
1
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature
Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Rating -180 -160
-5 -80 -150 200 125 -55 to +125
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain Turn-on time Storage time Fall time Collector output capacitance Transition frequency
■ Classification of hfe
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -1 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -120 V , IE=0
IEBO VEB= -4V , IC=0
VCE(sat) IC=-30mA, IB=- 3mA
VBE(sat) IC=-30mA, IB=- 3mA
VBE VCE= -5V , IC=-10mA
hFE VCE= -5V, IC= -10mA
ton
tstg See Test Circuit.
tf
Cob VCB= -10V, f-1MHz
fT VCE= -10V, IC= -10mA
Type
2SA1257-G3 2SA1257-G4 2SA1257-G5
Range
60-120
90-180
135-270
Marking
G3
G4
G5
Unit V V V mA mA
mW
Min -180 -160
-5
60
Typ
0.
15 0.
95 0.
15 2.
4 130
Max
-100 -100 -0.
7 -1.
2 -1.
5 270
3.
2
Unit V nA V
us pF MHz
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SMD Type
Transistors
PNP Transistors 2SA1257
Switching Time Test Circuit
PW=20µs D.
C.
″ 1%
IB1 RB
INPUT
IB2 VR
50Ω
+ 100µF
OUTPUT RL 2kΩ
+ 470µF
--5V 20V
10IB1=--10IB2=IC=10mA (For PNP, the polarity is reversed.
)
■ Typical Characterisitics
--50 IC -- VCE
--50
--0...
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