PNP Transistors - Kexin
Description
SMD Type
Transistors
PNP Transistors 2SB1125
SOT-89
■ Features
● Collector Current Capability IC=-0.
7A ● Collector Emitter Voltage VCEO=-50V ● Complements the 2SD1625
1.
70 0.
1
0.
42 0.
1
0.
46 0.
1
Unit:mm
1.
Base 2.
Collector 3.
Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Current - Pulse
Symbol VCBO VCEO VEBO IC ICP
Collector Power Dissipation
Junction Temperature Storage Temperature range
(Note.
1)
PD
TJ Tstg
Note.
1: mounted on ceramic substrate (250mm2X0.
8mm)
Rating -80 -50 -10 -0.
7 -2 0.
5 1.
3 150
-55 to 150
■ Electrical Characteristics Ta = 25℃
Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage
DC current gain
Collector output capacitance Transition frequency
Symbol
Test Conditions
VCBO Ic= -100 μA， IE=0
VCEO Ic= -10 mA， RBE=∞
VEBO IE= -100μA， IC=0
ICBO VCB= -40 V , IE=0
IEBO VEB= -8V , IC=0
VCE(sat) IC=-100mA, IB=-0.
1mA
VBE(sat) IC=-100mA, IB=-0.
1mA
VCE= -2V, IC= -50mA hFE
VCE=- 2V, IC= -500mA
Cob VCB= -10V, f=1MHz
fT VCB= -5V, IC=-50mA
■ Marking
Marking
BH
Unit V
A W ℃
Min Typ Max Unit -80 -50 V -10
-0.
1 uA
-0.
1 -1.
2
V -2 5000 3000 18 pF 170 MHZ
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SMD Type
■ Typical Characterisitics
PNP Transistors 2SB1125
Transistors
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SMD Type
■ Typical Characterisitics
PNP Transistors 2SB1125
Transistors
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