N -channel Enhancement Mode MOSFET
DESCRIPTION
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < Ω @ VGS=4. 5V
RDS(ON) < Ω @ VGS=10V High Power and current handing capability Lead free product is acquired Surface Mount Package
Application
PWM applications Load switch Power management
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Parameter
Symbol
Drain‐Source Voltage
VDS
Gate‐Source Voltage Drain Current @ Continuous(Note 2)
VGS ID(25℃) ID(100℃)
Drain C...