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3429DE

CXW
Part Number 3429DE
Manufacturer CXW
Description Dual P-Channel MOSFET
Published Feb 13, 2020
Detailed Description Dual P-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and...
Datasheet PDF File 3429DE PDF File

3429DE
3429DE

Overview
Dual P-channelEnhancementMode MOSFET DESCRIPTION The uses advanced trench technology to provide excellent RDS(ON) and low gate charge.
This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES ● VDS ● ID ● RDS(ON)( at VGS=-4.
5V) ● RDS(ON)( at VGS=-2.
5V) ● RDS(ON)( at VGS=-1.
8V) -20V -30A ＜19 mohm ＜26 mohm ＜45 mohm ● Trench Power LV MOSFET technology ● High density cell design for Low RDS(ON) ● High Speed switching Application  PWM applications  Load switch  Power management 3429DE DATASHEET (8) (7) D1 D1 (6) (5) D2 D2 (2) (4) G1 G2 S1 S2 (1) (3) P-Channel MOSFET DFN3333 ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbo...


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