P-channel Enhancement Mode MOSFET
The uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
GENERAL FEATURES
RDS(ON) < Ω @
RDS(ON) < Ω @
High Power and current handing capability
Lead free product is acquired
Surface Mount Package
Application
PWM applications Load switch Power management
3401 DATASHEET
3424
ABSOLUTE MAXIMUM RATINGS(TA=25℃unless otherwise noted)
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
TSTG
IS
IDM
ID...