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BUT11AF

Fairchild Semiconductor
Part Number BUT11AF
Manufacturer Fairchild Semiconductor
Description NPN Silicon Transistor
Published Jan 23, 2020
Detailed Description BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications NPN Silicon Transistor 1 TO-220F 1.Base 2.Collector...
Datasheet PDF File BUT11AF PDF File

BUT11AF
BUT11AF

Overview
BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications NPN Silicon Transistor 1 TO-220F 1.
Base 2.
Collector 3.
Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO Collector-Base Voltage : BUT11F : BUT11AF VCEO Collector-Emitter Voltage : BUT11F : BUT11AF VEBO IC ICP IB IBP PC TJ TSTG Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) *Base Current (Pulse) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Value 850 1000 400 450 9 5 10 2 4 40 150 - 65 ~ 150 Units V V V V V A A A A W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition VCEO(sus) * Collector-Emitter Sustaining Voltage : BUT11F : BUT11AF IC = 100mA, IB = 0 ICES Collector Cut-off Current : BUT11F : BUT11AF IEBO VCE(sat) Emitter Cut-off Current Collector-Emitter Saturation Voltage : BUT11F : BUT11AF VBE(sat) Base-Emitter Saturation Voltage : BUT11F : BUT11AF tON tSTG tF Turn On Time Storage Time Fall Time * Pulsed: pulsed duration = 300µs, duty cycle = 1.
5% VCE = 850V, VBE = 0 VCE = 1000V, VBE = 0 VBE = 9V, IC = 0 IC = 3A, IB = 0.
6A IC = 2.
5A, IB = 0.
5A IC = 3A, IB = 0.
6A IC = 2.
5A, IB = 0.
5A VCC = 250V, IC = 2.
5A IB1 = -IB2 = 0.
5A RL = 100Ω Min.
Typ.
Max.
Units 400 V 450 V 1 mA 1 mA 10 mA 1.
5 V 1.
5 V 1.
3 V 1.
3 V 1 µs 4 µs 0.
8 µs Thermal Characteristics TC=25°C unless otherwise noted Symbol Parameter RθjC Thermal Resistance, Junction to Case Typ Max 3.
125 Units °C/W ©2001 Fairchild Semiconductor Corporation Rev.
A2, August 2001 BUT11F/11AF Typical Characteristics 1000 VCE = 5V 100 10 1 IC = 5 IB VCE(sat)[V], SATURATION VOLTAGE hFE, DC CURRENT GAIN 10 1 0.
01 0.
1 1 IC[A], COLLECTOR CURRENT Figure 1.
DC current Gain 10 10 IC = 5 IB 1 VBE(sat) VBE(sat)[V], SATURATION VOLTAGE 0.
1 0.
01 0.
01 0.
1 1 IC[A], COLLECTOR CURRENT 10 Figure 3.
Base-Emitter Saturation Voltage 10 Ic MAX (Continuous) 1 DC IC[A], C...


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