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BTC9013A3

CYStech
Part Number BTC9013A3
Manufacturer CYStech
Description General Purpose NPN Epitaxial Planar Transistor
Published Jan 17, 2020
Detailed Description CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTC9013A3 Spec. No. : C203A3 Issued Date : 20...
Datasheet PDF File BTC9013A3 PDF File

BTC9013A3
BTC9013A3

Overview
CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor BTC9013A3 Spec.
No.
: C203A3 Issued Date : 2014.
02.
17 Revised Date : 2014.
02.
24 Page No.
: 1/8 Description • The BTC9013A3 is designed for using in driver stage of AF amplifier and general purpose switching application.
• High current , IC = 0.
6A • Low VCE(sat) , VCE(sat) = 50mV(typ.
) at IC/IB = 100mA/10mA, Optimal for low Voltage operation • Complementary to BTA9012A3.
• Pb-free lead plating and halogen-free package Symbol BTC9013A3 Outline TO-92 B：Base C：Collector E：Emitter E BC Ordering Information Device BTC9013A3-0-TB-G BTC9013A3-0-BK-G Package TO-92 (Pb-free lead plating and halogen-free package) TO-92 (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / Tape & Box 1000 pcs/ bag, 10 bags/box, 10boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB :2000 pcs/tape & box; BK: 1000 pcs / bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTC9013A3 CYStek Product Specification CYStech Electronics Corp.
Spec.
No.
: C203A3 Issued Date : 2014.
02.
17 Revised Date : 2014.
02.
24 Page No.
: 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature Range Storage Temperature Range Symbol VCBO VCEO VEBO IC PD RθJA Tj Tstg Limits 75 50 6 0.
6 625 200 -55~+150 -55~+150 Unit V V V A mW °C/W °C °C Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat)1 *VCE(sat)2 *VBE(sat)1 *VBE(sat)2 *VBE(ON) *hFE1 *hFE2 fT Cob Min.
75 50 6 144 40 140 - Typ.
0.
05 0.
18 0.
81 0.
95 0.
74 230 5.
4 Max.
50 50 0.
15 0.
4 0.
95 1.
2 1 246 - Unit V V V nA nA V V V V V MHz pF Test Conditions IC=100μA IC=1mA IE=10μA VCB=60V VEB=5V IC=100mA, IB=10mA IC=500mA, IB=50mA IC=100mA, IB=10mA IC=500mA, IB=50mA...


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