DatasheetsPDF.com

BC337-16

Fairchild Semiconductor
Part Number BC337-16
Manufacturer Fairchild Semiconductor
Description NPN General Purpose Amplifier
Published Jan 4, 2020
Detailed Description BC337-16 / BC337-25 BC337-16 BC337-25 E BC TO-92 NPN General Purpose Amplifier This device is designed for use as ge...
Datasheet PDF File BC337-16 PDF File

BC337-16
BC337-16


Overview
BC337-16 / BC337-25 BC337-16 BC337-25 E BC TO-92 NPN General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA.
Sourced from Process 12.
See TN3019A for characteristics.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted Symbol Parameter Value VCEO VCES VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Operating and Storage Junction Temperature Range 45 50 5.
0 1.
0 -55 to +150 *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits.
The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics TA = 25°C unless otherwise noted Symbol Characteristic PD Total Device Dissipation Derate above 25°C RθJC Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max BC337-16 / BC337-25 625 5.
0 83.
3 200 Units V V V A °C Units mW mW /°C °C/W °C/W © 1997 Fairchild Semiconductor Corporation 33716-25, Rev B BC337-16 / BC337-25 NPN General Purpose Amplifier (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V (B R )C E O V (B R )C E S V (B R )E B O ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IEBO Emitter Cutoff Current IC = 10 mA, IB = 0 IC = 100 µA, IE = 0 IE = 100 µA, IC = 0 VCB = 20 V, IE = 0, TA = +25 °C VCB = 20 V, IE = 0, TA = +150 °C VEB = 5.
0 V, IC = 0 ON CHARACTERISTICS hFE DC Current Gain VCE(sat) VBE(on) Collector-Emitter Saturation Voltage Base-Emitter On Voltage VCE = 1.
0 V, IC = 100 mA 337-16 337-25 VCE = 1.
0 V, IC = 500 mA IC = 500 mA, IB = 50 mA VCE = 1...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)