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BFU550

NXP
Part Number BFU550
Manufacturer NXP
Description NPN wideband silicon RF transistor
Published Dec 18, 2019
Detailed Description SOT143B BFU550 NPN wideband silicon RF transistor Rev. 2.1 — 17 April 2019 Product data sheet 1 Product profile 1.1 ...
Datasheet PDF File BFU550 PDF File

BFU550
BFU550

Overview
SOT143B BFU550 NPN wideband silicon RF transistor Rev.
2.
1 — 17 April 2019 Product data sheet 1 Product profile 1.
1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 4-pin dualemitter SOT143B package.
The BFU550 is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.
2 Features and benefits • Low noise, high breakdown RF transistor • AEC-Q101 qualified • Minimum noise figure (NFmin) = 0.
7 dB at 900 MHz • Maximum stable gain 21 dB at 900 MHz • 11 GHz fT silicon technology 1.
3 Applications • Applications requiring high supply voltages and high breakdown voltages • Broadband amplifiers up to 2 GHz • Low noise amplifiers for ISM applications • ISM band oscillators 1.
4 Quick reference data Table 1.
 Quick reference data Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp ≤ 87 °C hFE DC current gain IC = 15 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 25 mA; VCE = 8 V; f = 900 MHz Min Typ Max Unit -- 24 V -- 12 V -- 24 V -- 2V - 15 50 mA [1] - - 450 mW 60 95 200 - 0.
72 - pF - 11 - GHz NXP Semiconductors BFU550 NPN wideband silicon RF transistor Symbol Gp(max) NFmin PL(1dB) Parameter maximum power gain minimum noise figure output power at 1 dB gain compression Conditions IC = 15 mA; VCE = 8 V; f = 900 MHz IC = 1 mA; VCE = 8 V; f = 900 MHz; ΓS = Γopt IC = 25 mA; VCE = 8 V; ZS = ZL = 50 Ω; f = 900 MHz Min Typ Max Unit [2] - 21 - dB - 0.
7 - dB - 13.
5 - dBm [1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain.
If K < 1 then Gp(max) = MSG.
2 Pinning information Table 2.
 Discrete pinning Pin Description 1 colle...


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