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BFU530W

NXP
Part Number BFU530W
Manufacturer NXP
Description NPN wideband silicon RF transistor
Published Dec 18, 2019
Detailed Description 627 BFU530W NPN wideband silicon RF transistor Rev. 1 — 13 January 2014 Product data sheet 1. Product profile 1.1...
Datasheet PDF File BFU530W PDF File

BFU530W
BFU530W

Overview
627 BFU530W NPN wideband silicon RF transistor Rev.
1 — 13 January 2014 Product data sheet 1.
Product profile 1.
1 General description NPN silicon RF transistor for high speed, low noise applications in a plastic, 3-pin SOT323 package.
The BFU530W is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.
2 Features and benefits  Low noise, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.
6 dB at 900 MHz  Maximum stable gain 18.
5 dB at 900 MHz  11 GHz fT silicon technology 1.
3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband amplifiers up to 2 GHz  Low noise amplifiers for ISM applications  ISM band oscillators 1.
4 Quick reference data Table 1.
Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emi...


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