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BFU520Y

NXP
Part Number BFU520Y
Manufacturer NXP
Description Dual NPN wideband silicon RF transistor
Published Dec 18, 2019
Detailed Description BFU520Y Dual NPN wideband silicon RF transistor Rev. 1 — 20 February 2014 Product data sheet 1. Product profile 1.1 G...
Datasheet PDF File BFU520Y PDF File

BFU520Y
BFU520Y

Overview
BFU520Y Dual NPN wideband silicon RF transistor Rev.
1 — 20 February 2014 Product data sheet 1.
Product profile 1.
1 General description Dual NPN silicon RF transistor for high speed, low noise applications in a plastic, 6-pin SOT363 package.
The BFU520Y is part of the BFU5 family of transistors, suitable for small signal to medium power applications up to 2 GHz.
1.
2 Features and benefits  Low noise, high breakdown RF transistor  AEC-Q101 qualified  Minimum noise figure (NFmin) = 0.
65 dB at 900 MHz  Maximum stable gain 19 dB at 900 MHz  11 GHz fT silicon technology 1.
3 Applications  Applications requiring high supply voltages and high breakdown voltages  Broadband differential amplifiers up to 2 GHz  Low noise amplifiers for ISM applications  ISM band oscillators 1.
4 Quick reference data Table 1.
Quick reference data Tamb = 25 C unless otherwise specified Symbol Parameter Conditions VCB collector-base voltage open emitter VCE collector-emitter voltage open base shorted base VEB emitter-base voltage open collector IC collector current Ptot total power dissipation Tsp  87 C hFE DC current gain IC = 5 mA; VCE = 8 V Cc collector capacitance VCB = 8 V; f = 1 MHz fT transition frequency IC = 10 mA; VCE = 8 V; f = 900 MHz Min Typ Max Unit -- 24 V -- 12 V -- 24 V -- 2V - 5 30 mA [1] - - 450 mW 60 95 200 - 0.
48 - pF - 10 - GHz NXP Semiconductors BFU520Y Dual NPN wideband silicon RF transistor Table 1.
Quick reference data …continued Tamb = 25 C unless otherwise specified Symbol Parameter Conditions Gp(max) NFmin PL(1dB) maximum power gain minimum noise figure output power at 1 dB gain compression IC = 5 mA; VCE = 8 V; f = 900 MHz IC = 1 mA; VCE = 8 V; f = 900 MHz; S = opt IC = 10 mA; VCE = 8 V; ZS = ZL = 50 ; f = 900 MHz [1] Tsp is the temperature at the solder point of the collector lead.
[2] If K > 1 then Gp(max) is the maximum power gain.
If K  1 then Gp(max) = MSG.
2.
Pinning information Min [2] - - Typ 19 ...


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