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STGW25M120DF3

Part Number	STGW25M120DF3
Manufacturer	STMicroelectronics
Description	1200V 25A low-loss M series IGBT
Published	Dec 11, 2019
Detailed Description	STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package 3 2 1 TO-247 ...
Datasheet	STGW25M120DF3 PDF File

Overview

STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package 3 2 1 TO-247 Features • Maximum junction temperature: TJ = 175 °C • 10 μs of short-circuit withstand time • Low VCE(sat) = 1.
85 V (typ.
) @ IC = 25 A • Tight parameter distribution • Positive VCE(sat) temperature coefficient • Low thermal resistance • Soft- and fast-recovery antiparallel diode G(1) C(2, TAB) Applications • Industrial drives • UPS • Solar • Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system ...

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STGW25M120DF3 1200V 25A low-loss M series IGBT - STMicroelectronics

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