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2SB1236

Part Number	2SB1236
Manufacturer	INCHANGE
Description	Silicon PNP Power Transistor
Published	Dec 7, 2019
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage. (BVCEO = -120V) ·Low collector output capacitance...
Datasheet	2SB1236 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·High breakdown voltage.
(BVCEO = -120V) ·Low collector output capacitance.
·High transition frequency.
(fT = 50MHz) ·Complement to Type 2SD1857 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for audio amplifier, voltage regulator, and general purpose power amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -120 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1.
5 A ICP Collector Current-Pulse -3 A PC Collector Power Dissipation 10 W TJ Junction Temperat...

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