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SCT20N120

STMicroelectronics
Part Number SCT20N120
Manufacturer STMicroelectronics
Description Silicon carbide Power MOSFET
Published Dec 4, 2019
Detailed Description SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ., TJ = 150 °C) in an HiP247 package HiP247 ...
Datasheet PDF File SCT20N120 PDF File

SCT20N120
SCT20N120

Overview
SCT20N120 Datasheet Silicon carbide Power MOSFET 1200 V, 20 A, 189 mΩ (typ.
, TJ = 150 °C) in an HiP247 package HiP247 3 2 1 D(2, TAB) Features • Very tight variation of on-resistance vs.
temperature • Very high operating junction temperature capability (TJ = 200 °C) • Very fast and robust intrinsic body diode • Low capacitance Applications • Solar inverters, UPS • Motor drives • High voltage DC-DC converters • Switch mode power supplies G(1) S(3) AM01475v1_noZen Description This silicon carbide Power MOSFET is produced exploiting the advanced, innovative properties of wide bandgap materials.
This results in unsurpassed on-resistance per unit area and very good switching performance al...


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