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CTS05S40

Toshiba
Part Number CTS05S40
Manufacturer Toshiba
Description Schottky Barrier Diode
Published Nov 25, 2019
Detailed Description Schottky Barrier Diode Silicon Epitaxial CTS05S40 1. Applications • High-Speed Switching 2. Packaging and Internal Circu...
Datasheet PDF File CTS05S40 PDF File

CTS05S40
CTS05S40

Overview
Schottky Barrier Diode Silicon Epitaxial CTS05S40 1.
Applications • High-Speed Switching 2.
Packaging and Internal Circuit CTS05S40 1: Cathode 2: Anode CST2 3.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 40 V Reverse voltage VR 30 Average rectified current IO (Note 1) 0.
5 A Non-repetitive peak forward surge current IFSM (Note 2) 2 Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decreas...


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