DatasheetsPDF.com

FFSB20120A-F085

ON Semiconductor
Part Number FFSB20120A-F085
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published Nov 7, 2019
Detailed Description FFSB20120A-F085 Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a comp...
Datasheet PDF File FFSB20120A-F085 PDF File

FFSB20120A-F085
FFSB20120A-F085

Overview
FFSB20120A-F085 Silicon Carbide Schottky Diode 1200 V, 20 A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 200 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • AEC−Q101 qualified Applications • Automotive HEV−EV Onboard Chargers • Automotive HEV−EV DC−DC Converters www.
onsemi.
com 1.
,3.
Cathode 2.
Anode Schottky Diode 3 1 2 D2PAK−3(TO−263, 3−LEAD) CASE 418AJ MARKING DIAGRAM $Y&Z&3&K FFSB 20120A $Y = O...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)