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FFSD08120A

ON Semiconductor
Part Number FFSD08120A
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published Nov 7, 2019
Detailed Description Silicon Carbide Schottky Diode 1200 V, 8 A FFSD08120A Description Silicon Carbide (SiC) Schottky Diodes use a completely...
Datasheet PDF File FFSD08120A PDF File

FFSD08120A
FFSD08120A

Overview
Silicon Carbide Schottky Diode 1200 V, 8 A FFSD08120A Description Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 80 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery/No Forward Recovery • This Device is Pb−Free, Halogen Free/BFR Free and RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits www.
onsemi.
com 1, 2, 4.
Cathode 3.
Anode Schottky Diode 4 12 3 DPAK3 CASE 369AS MARKING DIAGRAM $Y&Z...


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