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FFSB0865B

ON Semiconductor
Part Number FFSB0865B
Manufacturer ON Semiconductor
Description Silicon Carbide Schottky Diode
Published Nov 7, 2019
Detailed Description FFSB0865B Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new techn...
Datasheet PDF File FFSB0865B PDF File

FFSB0865B
FFSB0865B

Overview
FFSB0865B Silicon Carbide Schottky Diode 650 V, 8 A Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 33 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Peak Repetitive Reverse Voltage Single Pulse Avalanche Energy (TJ = 25°C, IL(pk) = 11.
5 A, L = 0.
5 mH, V = 50 V) VRRM EAS 650 V 33 mJ Continuous Rectified Forward Current Non−Repetitive Peak Forward Surge Current @ TC < 147 @ TC < 135 TC = 25°C tP = 10 ms IF IFM 8.
0 A 10.
1 577 A TC = 150°C tP = 10 ms 533 Non−Repetitive Forward Surge Current (Half−Sine Pulse) TC = 25°C tP = 8.
3 ms IFSM 56 A Power Dissipation TC = 25°C TC = 150°C Operating Junction and Storage Temperature Range Ptot TJ, Tstg 73 12 −55 to +175 W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS Parameter Symbol Value Unit Thermal Resistance, Junction−to−Case, Max.
RqJC 2.
05 °C/W www.
onsemi.
com VRRM 650 V IF 8.
0 A 1.
, 3.
Cathode 2.
Anode Schottky Diode 3 1 2 D2PAK−3 TO−263 CASE 418BK MARKING DIAGRAM &Z&3&K FFSB 0865B &Z &3 ...


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