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FFSB0665B

ON Semiconductor
Part Number FFSB0665B
Manufacturer ON Semiconductor
Description SiC Schottky Diode
Published Nov 7, 2019
Detailed Description Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L FFSB0665B Silicon Carbide (SiC) Schottky Diod...
Datasheet PDF File FFSB0665B PDF File

FFSB0665B
FFSB0665B

Overview
Silicon Carbide (SiC) Schottky Diode – EliteSiC, 6 A, 650 V, D2, D2PAK-2L FFSB0665B Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability compared to Silicon.
No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor.
System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
Features • Max Junction Temperature 175°C • Avalanche Rated 24.
5 mJ • High Surge Current Capacity • Positive Temperature Coefficient • Ease of Paralleling • No Reverse Recovery / No Forward Recovery • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Applications • General Purpose • SMPS, Solar Inverter, UPS • Power Switching Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol ...


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