Power Transistor - Infineon
Description
Type
OptiMOS™3 Power-Transistor
Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated • Pb-free plating
Type
IPD090N03L G E8177
IPD090N03L G E8177
Product Summary VDS RDS(on),max ID
30 V 9 mW 40 A
Package Marking
PG-TO252-3-11 090N03L
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
I D V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C
V GS=4.
5 V, T C=25 °C
Pulsed drain current2) Avalanche current, single pulse3) Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage 1) J-STD20 and JESD22
V GS=4.
5 V, T C=100 °C
I D,pulse I AS E AS
dv /dt
V GS
T C=25 °C
T C=25 °C
I D=12 A, R GS=25 W
I D=40 A, V DS=24 V, di /dt =200 A/µs, T j,max=175 °C
Rev.
2.
0
page 1
Value 40 37 40
30 280 40 40
6
±20
Unit A
mJ kV/µs V
2014-01-14
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Power dissipation
P tot T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
IPD090N03L G E8177
Value 42
-55 .
.
.
175 55/175/56
Unit W °C
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case SMD version, device on PCB
R thJC R thJA
minimal footprint 6 cm² cooling area4)
-
- 3.
6 K/W - 75 - 50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
30
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=250 µA
1
- 2.
2
Zero gate voltage drain current
I DSS
V DS=30 V, V GS=0 V, T j=25 °C
-
0.
1
1 µA
V DS=30 V, V GS=0 V, T j=125 °C
-
10 100
Gate-source leakage current Drain-source on-state resistance5)
I GSS
V GS=20 V, V DS=0 V
R DS(on) V GS...
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