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2N2906E

Part Number	2N2906E
Manufacturer	KEC
Description	EPITAXIAL PLANAR PNP TRANSISTOR
Published	Oct 26, 2019
Detailed Description	SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Low Leakage Current : ICEX=-50...
Datasheet	2N2906E PDF File

Overview

SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES Low Leakage Current : ICEX=-50nA(Max.
), IBL=-50nA(Max.
) @VCE=-30V, VEB=-3V.
Excellent DC Current Gain Linearity.
Low Saturation Voltage : VCE(sat)=-0.
4V(Max.
) @IC=-50mA, IB=-5mA.
Low Collector Output Capacitance : Cob=4.
5pF(Max.
) @VCB=5V.
MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Junction Temperature Storage Temperature Range * Total Rating VCBO VCEO VEBO IC IB PC Tj Tstg RATING -40 -40 -5 -200 -50 200 150 -55 150 UNIT V V V mA mA mW H A A1 CC 2N2906E EPITAXIAL P...

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