SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2061
DESCRIPTION ·With TO-220Fa package ·Low collector saturation voltage ·Excellent DC current gain characteristics ·Wide safe operating area
APPLICATIONS ·For low frequency power
amplifier applications
PINNING PIN 1 2 3
DESCRIPTION Base Collector Emitter
Fig. 1 simplified outline (TO-220Fa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC Collector current (DC)
ICM Collector current-Peak
PC Collector power dissipation
Tj Junction temperature Tstg Storage temperature
CONDITIONS Open emitter Open base Open collector
TC=25 Ta=25
VALUE 80 60 5 3 6 30 2 150
-55~150
UNIT V V V A A
W
SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD2061
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=1mA , IB=0
V(BR)CBO Collector-base breakdown voltage
IC=50µA , IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=50µA , IC=0
VCEsat Collector-emitter saturation voltage IC=2A; IB=0. 2A
VBEsat
Base-emitter saturation voltage
IC=2A ;IB=0. 2A
ICBO Collector cut-off current
VCB=60V IE=0
IEBO Emitter cut-off current
VEB=4V; IC=0
hFE DC current gain
IC=0. 5A ; VCE=5V
fT Transition frequency
IC=0. 5A ; VCE=5V;f=5MHz
Cob Output capacitance
IE=0 ; VCB=10V ,f=1MHz
hFE Classifications EF
100-200 160-320
MIN TYP. MAX UNIT 60 V 80 V 5V
1. 0 V 1. 5 V 10 µA 10 µA 100 320 8 MHz 70 pF
2
SavantIC Semiconductor
Silicon NPN Power Transistors
PACKAGE OUTLINE
Product Specification
2SD2061
Fig. 2 Outline dimensions (unindicated tolerance:±0. 15 mm) 3
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D2061 PDF File
