3Q Hi-Com Triac - WeEn
Description
BTA208X-600E
3Q Hi-Com Triac
19 September 2018
Product data sheet
1.
General description
Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package.
This "series E" triac balances the requirements of commutation performance and gate sensitivity.
The "sensitive gate" "series E" is intended for interfacing with low power drivers including microcontrollers.
2.
Features and benefits
• 3Q technology for improved noise immunity • Direct interfacing with low power logic circuits and microcontrollers • Good immunity to false turn-on by dV/dt • High commutation capability with sensitive gate • High voltage capability • Isolated mounting base package • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only
3.
Applications
• Electronic thermostats • General purpose motor controls
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 73 °C; Fig.
1; Fig.
2; Fig.
3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig.
4; Fig.
5
full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.
1 A; T2+ G+;
Tj = 25 °C; Fig.
7
VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7
Min Typ Max Unit - - 600 V - - 8A - - 65 A - - 71 A - - 125 °C
- - 10 mA - - 10 mA
WeEn Semiconductors
BTA208X-600E
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt
rate of change of commutating current
Conditions
VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7
VD = 12 V; Tj = 25 °C; Fig.
9
IT = 10 A; Tj = 25 °C; Fig.
10
VDM = 402 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; gate open circ...
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