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BTA208-600E

WeEn
Part Number BTA208-600E
Manufacturer WeEn
Published Oct 3, 2019
Description 3Q Hi-Com Triac
Detailed Description BTA208-600E 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commuta...
Datasheet PDF File BTA208-600E PDF File

BTA208-600E
BTA208-600E


Overview
BTA208-600E 3Q Hi-Com Triac 19 September 2018 Product data sheet 1.
General description Planar passivated high commutation three quadrant triac in a SOT78 (TO-220AB) plastic package.
This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers.
2.
Features and benefits • 3Q technology for improved noise immunity • Direct interfacing with low power drivers and logic ICs • High commutation capability • High voltage capability • Planar passivated for voltage ruggedness and reliability • Sensitive gate for easy logic level triggering • Triggering in three quadrants only 3.
Applications • Electronic thermostats • General purpose motor controls 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 102 °C; Fig.
1; Fig.
2; Fig.
3 ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig.
4; Fig.
5 full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms Tj junction temperature Static characteristics IGT gate trigger current VD = 12 V; IT = 0.
1 A; T2+ G+; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7 VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7 Min Typ Max Unit - - 600 V - - 8A - - 65 A - - 72 A - - 125 °C - - 10 mA - - 10 mA - - 10 mA WeEn Semiconductors BTA208-600E 3Q Hi-Com Triac Symbol Parameter IH holding current VT on-state voltage Dynamic characteristics dVD/dt rate of rise of off-state voltage dIcom/dt rate of change of commutating current Conditions VD = 12 V; Tj = 25 °C; Fig.
9 IT = 10 A; Tj = 25 °C; Fig.
10 VDM = 402 V; Tj = 110 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 0.
1 V/µs; gate open circuit VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A; dVcom/dt = 10 V/µs; ga...


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