3Q Hi-Com Triac - WeEn
Description
BTA204X-800C
3Q Hi-Com Triac
19 September 2018
Product data sheet
1.
General description
Planar passivated high commutation three quadrant triac in a SOT186A (TO-220F) "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.
This "series C" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber.
2.
Features and benefits
• 3Q technology for improved noise immunity • High commutation capability with maximum false trigger immunity • High immunity to false turn-on by dV/dt • High voltage capability • Isolated mounting base package • Less sensitive gate for high noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in three quadrants only
3.
Applications
• General purpose motor control circuits • Home appliances • Rectifier-fed DC inductive loads e.
g.
DC motors and solenoids
4.
Quick reference data
Table 1.
Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
IT(RMS)
RMS on-state current full sine wave; Th ≤ 92 °C; Fig.
1; Fig.
2; Fig.
3
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig.
4; Fig.
5
full sine wave; Tj(init) = 25 °C; tp = 16.
7 ms
Tj junction temperature
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.
1 A; T2+ G+;
Tj = 25 °C; Fig.
7
Min Typ Max Unit - - 800 V - - 4A - - 25 A - - 27 A - - 125 °C
- - 35 mA
WeEn Semiconductors
BTA204X-800C
3Q Hi-Com Triac
Symbol
Parameter
IH holding current
VT on-state voltage
Dynamic characteristics
dVD/dt
rate of rise of off-state voltage
dIcom/dt
rate of change of commutating current
Conditions
VD = 12 V; IT = 0.
1 A; T2+ G-; Tj = 25 °C; Fig.
7
VD = 12 V; IT = 0.
1 A; T2- G-; Tj = 25 °C; Fig.
7
VD = 12 V; Tj = 25 °C; Fig.
9
IT = 5 A; Tj = 25 °C; Fig.
10
VDM = 536 V; Tj = 125 °C; (VDM = 67% of VDRM); exponential waveform; gate open circuit
VD ...
Similar Datasheet
