dual n-channel JFET - Siliconix
Description
matched dual n-channel JFETs
designed for • • •
H
Siliccnix
Performance Curves NCB See Section 4
• Wideband Differential Amplifiers
• Commutators
BENEFITS
• High Gain 7500 ~mho Minimum 9fs
• Specified Matching Characteristics
*ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Gate Voltage .
±80V
Gate·Drain or Gate·Source Voltage .
.
.
.
-40 V Gate Current .
50mA Device Dissipation (Each Side), T A = 25°C
(Derate 2.
2 mW;oC) .
.
.
325mW Total Device Dissipation, T A = 25°C
(Derate 3.
3 mW;oC) .
.
.
.
•.
.
.
650mW Storage Temperature Range .
.
.
.
-65 to +200°C Lead Temperature
(1/16" from case for 10 seconds) 300°C
TO·71
See Section 6
~~G, G2 8, 52
82
G, 30 o·o.
02
20 0 7 G2 0, ,0
8,
Bottom View
Gt "Ii G2
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
1
2"
3"
S T
4" A
5"
T I
"6 C
"7"
IGSS
BVGSS VGS(off) VGS(f) lOSS rOS(on)
8 9f.
9"
0 y
90.
iT~i'ON Crss CISS
121 NF =C
13 en
Characteristic
Gate-Reverse Current
Gate-5ource Breakdown Voltage Gate-Source Cutoff Voltage Gate-Source Voltage Saturation Drain Current (Note 1) Static Dram Source ON Resistance Common-Source Forward Transconductance (Note 1)
Common-Source Output Conductance Common-Source Reverse Transfer CapaCitance Common-Source Input Capacitance Spot NOise Figure
Equivalent Short CircUit Input NOIse Voltage
Min
-40 -05
5 7500 7000
Characteristics
14
-M 15 TA -C
H 16 I
N G
1-
17
10SSl IOSS2 IVGS1-V GS2 1
~IVGS1-VGS21
~T
9f.
l 9f.
2
Saturation Drain Current Ratio (Note.
1 and 2) Differential Gate-Source Voltage
Gate-Source Voltage DifferentIal Oroft (Note 3)
Transconductance Ratio (Note.
1 and 2)
2N5564 Min Max
2N5565 Min Max
095
1 0.
95
1
5 10 10 25
10 25
095
1 0.
90
1
Max -100 -200
Unit pA nA
-3 1.
0 30 100 12,500
45 3 12
1.
0
50
V
mA
n
Jlmho
pF dB nV
v'Hz
2N5566 Unit
M,n Max
0.
95 1 -
20 mV
50 I'VI
'c
50
0.
90 1 -
Test Conditions
VGS=-20V, VOS=O
I I 150'C
IG=-...
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