n-channel JFET - Siliconix
Description
n-channel JFETs
designed for • • •
• Ultra-High Input Impedance Amplifiers
Electrometers pH Meters Smoke Detectors
ABSOLUTE MAXIMUM RATINGS (25°C)
Reverse Gate-Drain or Gate-Source Voltage .
.
.
.
-40 V Gate Current .
10 rnA Total Device Dissipation at 25°C Ambient
(Derate 3.
27 mW;oC) .
.
360 mW Operating Temperature Range .
.
.
-55 to 135°C Storage Temperature Range -55 to 150°C Lead Temperature Range
(1/16" from case for 10 seconds) .
.
.
.
300°C
.
H
Siliconix
Performance Curves NT See Sedion 4
BENEFITS • Low Power
lOSS < 90 J1.
A (PN4117)
• Minimum Circuit Loading
IGSS < 1 pA (PN4117A Series)
TO·92 See Section 6
,~:
GO
SC
oc Bottom View
Plastic
"ZZ"
~~
----10"""1 --"ZZ"
~~
1J>0"J"">1
--"ZZ"
~~
o~(X)
--"ZZ"
~~
o~(X) J>J>
ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
CharacteristIC
: -1
.
~
3
S T
-4"
A T
-5
6
I C
-
B
-
0 Y
9N
_A
M 10 I
-c
11
IGSS
IGS5 BVGSS VGSloffl lOSS 9fs gos CISS Crss
Gate Reverse Current PN4117 Series Only
Gate Reverse Current PN4117A Senes Only
Gate-Source Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Dram Current (Note 2)
Common-Source Forward Transconductance (Note 2)
Common-Source Output Conductance
Common-Source Input Capal::1tance
Common·Source Reverse Transfer Capacitance
PN4117 PN4117A
PN4118 PN4118A
PN4ll9 PN4119A
PN4120 PN412DA
Min Typ Max Min Typ Max Min Typ Max Min Typ Max
Umt
-10 -10 -10 -20 pA
-25 -25 -25 -50 nA
-1 -1 -1 -5 pA
-25 -25 -25
-10 nA
-40 -40 -06 -1 B -1
-40 -3 -2
-6 -06
-40 I V
Test ConditIOns
VGS = ·20 V.
VOS = 0
VGS = -20 V.
VOS = 0 IG=-lpA.
VOS=O VOS-l0V.
IO-l nA
100°C 10QoC
003 009 0.
08 0.
24 020 060 003
03 rnA VOS=10V.
VGS=O
70
210 80
250 100
330 70
300
,umho
f"" 1 kHz
10 20
VOS= IOV,VGS=O
pF 15 15 15 15
f= 1 MHz
NOTES: 1.
Due to symmetrical geometry.
these units may be operated With source and drain leads interchanged.
2.
This parameter is measured dUring a 2 ms I...
Similar Datasheet
