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1N23WE

Advanced Semiconductor
Part Number 1N23WE
Manufacturer Advanced Semiconductor
Title SILICON MIXER DIODE
Description The ASI 1N23WE is a Silicon Mixer Diode Designed for Applications Operating From 8.0 to 12.4 GHz. ...
Features • High burnout resistance • Low noise figure • Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20...
Published Mar 23, 2005
Datasheet PDF File 1N23WE PDF File


1N23WE
1N23WE


Features

• High burnout resistance
• Low noise figure
• Hermetically sealed package MAXIMUM RATINGS IF VR PDISS TJ TSTG O O 20 mA 1.0 V 5.0 (ERGS) @ TC = 25 C -55 C to +150 C -55 C to +150 C O O O NONE CHARACTERISTICS SYMBOL NF VSWR ZIF frange RL = 22 Ω ...



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