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AO4830

Alpha & Omega Semiconductors
Part Number AO4830
Manufacturer Alpha & Omega Semiconductors
Description 80V Dual N-Channel MOSFET
Published Sep 16, 2019
Detailed Description AO4830 80V Dual N-Channel MOSFET General Description The AO4830 uses advanced trench technology to provide excellent RD...
Datasheet PDF File AO4830 PDF File

AO4830
AO4830

Overview
AO4830 80V Dual N-Channel MOSFET General Description The AO4830 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .
This device is suitable for use as a load switch or in PWM applications.
Product Summary VDS (V) = 80V ID = 3.
5A RDS(ON) < 75mΩ (VGS = 10V) (VGS = 10V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.
1mH C ID IDM IAR EAR Power Dissipation B TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 80 ±30 3.
5 2.
9 18 16 12.
8 2 1.
3 -55 to 150 D1 G2 S1 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max 62.
5 90 40 D2 S2 Units V V A A mJ W °C Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd.
www.
aosmd.
com AO4830 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 80 IDSS Zero Gate Voltage Drain Current VDS=80V, VGS=0V TJ=55°C 1 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±30V 100 VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 3.
5 4.
2 5 ID(ON) On state drain current VGS=10V, VDS=5V 18 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=3.
5A TJ=125°C 62 75 113.
0 135 gFS Forward Transconductance VDS=5V, ID=3.
5A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.
77 1 IS Maximum Body-Diode Continuous Current ISM Pulsed Body-diode CurrentC 2.
5 18 V µA nA V A mΩ S V A A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=...


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